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| DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 10.00.3 4.50.2 3.20.2 2.70.2 15.00.3 30.1 40.2 FEATURES * Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = -10 V, ID = -10 A) RDS(on)2 = 88 m: Max. (VGS = -4 V, ID = -10 A) * Low Ciss Ciss = 2360 pF Typ. 0.70.1 2.54 * Built-in Gate Protection Diode 13.5 MIN. 12.00.2 ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage Gate to Source Voltage* Gate to Source Voltage Drain Current (DC) Drain Current (pulse)** Total Power Dissipation (TC = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature VDSS VGSS (AC) VGSS (DC) ID (DC) ID (pulse) PT PT Tch Tstg -60 - +20 -20, 0 - +20 - +80 35 2.0 150 -55 to +150 V V V A A W W C C 1.30.2 1.50.2 2.54 2.50.1 0.650.1 1. Gate 2. Drain 3. Source 123 ISOLATED TO-220 (MP-45F) Drain * f = 20 kHz, Duty Cycle d 10% (+Side) ** PW d 10 Ps, Duty Cycle d 1% Gate Body Diode THERMAL RESISTANCE Channel to Case Channel to Ambient Rth (ch-C) Rth (ch-A) 3.57 C/W 62.5 C/W Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D11266EJ2V0DS00 (2nd edition) Date Published January 1998 N CP(K) Printed in Japan (c) 1998 2SJ494 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS (off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = -20 A VDD = -48 V VGS = -10 V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 di/dt = 100 A/Ps TEST CONDITIONS VGS = -10 V, ID = -10 A VGS = -4 V, ID = -10 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -10 A VDS = -60 V, VGS = 0 VGS = +20 V, VDS = 0 VDS = -10 V VGS = 0 f = 1 MHz ID = -10 A VGS(on) = -10 V VDD = -30 V RG = 10 : 2360 1060 350 25 160 310 240 74 12 16 1.0 130 290 1.5 -1.0 8.0 MIN. TYP. 39 61 -1.5 15 -10 +10 MAX. 50 88 -2.0 UNIT m: m: V S PA PA pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. RL PG. RG RG = 10 VGS Wave Form VGS 10 % VGS (on) D.U.T. IG = 2 mA 90 % RL VDD VDD ID 0 90 % 90 % ID PG. 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf 2 2SJ494 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed -100 ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA -1000 ID - Drain Current - A 50 0 s -100 d ite Lim 0 V) n) (o S =1 S RD t VG (a ID(pulse) -80 -60 -40 VGS= -10 V 30 0 s ID(DC) Po 1 10 m m s -10 we 10 rD iss ipa 0 s m s DC d VGS = -4 V -20 tio n -1 -0.1 Tc = 25 C Single Pulse Lim ite -1 -10 -100 0 -4 -8 -12 -16 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS -1 000 Tch = -25 C 25 C 125 C Pulsed ID - Drain Current - A -100 -10 -1 VDS = -10 V -15 0 -5 -10 VGS - Gate to Source Voltage - V 3 2SJ494 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-a) = 62.5 C/W 10 Rth(ch-c) = 3.57 C/W 1 0.1 0.01 Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 100 VDS = -10 V Pulsed Tch = -25 C 25 C 75 C 125 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 Pulsed 10 100 ID = -20 A 1 50 0.1 -0.1 -1.0 -10 -100 0 -5 -10 -20 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - m VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE -2.0 VDS = -10 V ID = -1 mA 150 Pulsed VGS(off) - Gate to Source Cutoff Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 -1.5 VGS = -4 V VGS = -10 V 50 -1.0 -0.5 0 0 -50 0 50 100 150 Tch - Channel Temperature - C -1 -10 ID - Drain Current - A -100 4 2SJ494 RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 160 -100 VGS = -4 V -10 VGS = 0 -1 120 80 VGS = -4 V 40 VGS = -10 V ID = -10 A -50 0 50 100 150 -0.1 0 -1.0 -2.0 -3.0 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 1 000 td(off) tf 100 tr 10 10 000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz Ciss 1 000 Coss Crss 100 td(on) VDD = -30 V VGS = -10 V RG = 10 -10 -100 10 -0.1 -1 -10 -100 1 -0.1 -1 VDS - Drain to Source Voltage - V ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 50 A/ s VGS = 0 100 -40 VDD = -48 V -24 V -12 V -10 -8 -6 10 -20 VDS 0 20 40 60 80 -4 -2 0 1 -0.1 -1 -10 -100 IF - Diode Current - A QG - Gate Charge - nC VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS -80 ID = -20 A -14 VGS -60 -12 5 2SJ494 Document Name NEC semiconductor device reliability/quality control system Power MOS FET features and application to switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS) Document No. C11745E D12971E TEA-1035 TEA-1037 C11892E 6 2SJ494 [MEMO] 7 2SJ494 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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